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1

Pre-amorphization damage in ion-implanted silicon

Schreutelkamp, R.J., Custer, J.S., Liefting, J.R., Lu, W.X., Saris, F.W.

Journal:

Materials Science Reports

Year:

1991

Language:

english

File:

PDF, 7.81 MB

english, 1991

2

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

A.S. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, W. De Bosscher, R.J. Schreutelkamp

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

3

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Noda, T., Vandervorst, W., Felch, S., Parihar, V., Cuperus, A., Mcintosh, R., Vrancken, C., Rosseel, E., Bender, H., Van Daele, B., Niwa, M., Umimoto, H., Schreutelkamp, R., Absil, P. P., Jurczak, M.,

Year:

2007

Language:

english

File:

PDF, 2.33 MB

english, 2007

4

Impact of silicidation on the excess noise behaviour of mos transistors

E.P Vandamme, L.K.J Vandamme, C Claeys, E Simoen, R.J Schreutelkamp

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 498 KB

english, 1995

5

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

A. Pérez-Rodríguez, E. Roca, T. Jawhari, J.R. Morante, R.J. Schreutelkamp

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 574 KB

english, 1994

6

Two-step anneals to avoid bridging during Co silicidation

R.J. Schreutelkamp, P. Vandenabeele, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 461 KB

english, 1993

7

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

E Roca, J Vanhellemont, R.J Schreutelkamp, J Vermeiren

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 419 KB

english, 1994

8

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Eneman, G., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Schreutelkamp, R., Moroz, V., Smith, L., An De Keersgieter, Jurczak, M., Kristin De Meyer

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 609 KB

english, 2006

9

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology

Ortolland, C., Ragnarsson, L.-A., Kerner, C., Chiarella, T., Rosseel, E., Okuno, Y., Favia, P., Richard, O., Everaert, J.-L., Schram, T., Kubicek, S., Absil, P.P., Biesemans, S., Schreutelkamp, R., Ho

Year:

2009

Language:

english

File:

PDF, 534 KB

english, 2009

10

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity

Rosseel, E., Lu, J.P., Hikavyy, A., Verheyen, P., Hoffmann, T., Richard, O., Geypen, J., Bender, H., Loo, R., Absil, P., Intosh, R. Mc, Felch, S. B., Schreutelkamp, R.

Year:

2007

Language:

english

File:

PDF, 3.13 MB

english, 2007

11

[IEEE 2005 Symposium on VLSI Technology - Kyoto, Japan (2005.06.14-2005.06.16)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Layout impact on the performance of a locally strained PMOSFET

Eneman, S., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Degraeve, R., Kaczer, B., Moroz, V., De Keersgieter, A., Schreutelkamp, R., Kawaguchi, M., Kim, Y., Samoilov, A., Smith, L., Absil,

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

12

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions

Bargallo Gonzalez, M., Eneman, G., Verheyen, P., Claeys, C., Benedetti, A., Bender, H., De Meyer, K., Simoen, E., Schreutelkamp, R., Washington, L., Nouri, F.

Year:

2006

Language:

english

File:

PDF, 1.97 MB

english, 2006

13

Leakage Current Control in Recessed SiGe Source/Drain Junctions

Claeys, C., Gonzalez, M. Bargallo, Eneman, G., Verheyen, P., Bender, H., Schreutelkamp, R., Washington, L., Nouri, F., Simoen, E.

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 1.02 MB

english, 2007

14

Self-Aligned Suicides for ULSI

Maex, Karen, Schreutelkamp, Rob

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 2.20 MB

english, 1992

15

A new method for measuring the saturation velocity of submicron CMOS transistors

R.J. Schreutelkamp, L. Deferm

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

16

Avoiding dislocations in ion-implanted silicon

F.W. Saris, J.S. Custer, R.J. Schreutelkamp, R.J. Liefting, R. Wijburg, H. Wallinga

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 631 KB

english, 1992

17

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

R.J. Schreutelkamp, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 438 KB

english, 1992

18

Technological aspects of epitaxial CoSi2 layers for CMOS

A. Lauwers, R.J. Schreutelkamp, B. Brijs, H. Bender, K. Maex

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 812 KB

english, 1993

19

Deep implants by channeling implantation

R.J. Schreutelkamp, F.W. Saris, J.F.M. Westendorp, R.E. Kaim, G.B. Odlum, K.T.F. Janssen

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 362 KB

english, 1989

20

Structural and electrical characterization of Si(100) implanted with P+ and Si+ ions along the [100] channelling direction

R.J. Schreutelkamp, R. De Reus, F.W. Saris, R.E. Kaim, J.F.M. Westendorp, K.T.F. Janssen, J.J.M. Ottenheim

Journal:

Materials Science and Engineering: B

Year:

1990

Language:

english

File:

PDF, 1.47 MB

english, 1990

21

The role of extended defects on transient boron diffusion in ion-implanted silicon

R.J. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen, R.E. Kaim

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 2.96 MB

english, 1992

22

Dislocation formation in silicon implanted at different temperatures

J.R. Liefting, J.S. Custer, R.J. Schreutelkamp, F.W. Saris

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 2.83 MB

english, 1992

23

Breast-conserving Therapy for Palpable and Nonpalpable Breast Cancer: Can Surgical Residents Do the Job Irrespective of Experience?

Berry Cleffken, Job Postelmans, Steven Olde Damink, Marius Nap, Ineke Schreutelkamp, Hans van der Bijl

Journal:

World Journal of Surgery

Year:

2007

Language:

english

File:

PDF, 145 KB

english, 2007

24

Channeled implantation with a parallel scanned ion beam

J.F.M. Westendorp, R.E. Kaim, G.B. Odlum, R. Schreutelkamp, F.W. Saris, K.T.F. Janssen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 370 KB

english, 1989

25

An MeV facility for materials research

A. Polman, A.M. Vredenberg, W.H. Urbanus, P.J. van Deenen, H. Alberda, H. Krop, I. Attema, E. De Haas, H. Kersten, S. Doorn, J. Derks, J. Ter Beek, S. Roorda, R. Schreutelkamp, J.G. Bannenberg, F.W. S

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 801 KB

english, 1989

26

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

R.J. Schreutelkamp, J.R. Liefting, P.M. Zagwijn, W.X. Lu, F.W. Saris

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1990

Language:

english

File:

PDF, 578 KB

english, 1990

27

Damage distribution and annealing behaviour of high-energy 115In+ implanted into Si(100)

Zhang Bo-Xu, Wang Zhong-Lie, R.J. Schreutelkamp, F.W. Saris, Du An-Yan, Li Qi

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1990

Language:

english

File:

PDF, 646 KB

english, 1990

28

Addendum to “range straggling of MeV ions in amorphous silicon; discrepancies with TRIM”

R.J. Schreutelkamp, J.R. Liefting, P.M. Zagwijn, W.X. Lu, F.W. Saris

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1990

Language:

english

File:

PDF, 184 KB

english, 1990

29

Reduction of secondary defect formation in MeV As ion implanted Si(100)

R.J. Schreutelkamp, W.X. Lu, J.R. Liefting, V. Raineri, J.S. Custer, F.W. Saris

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 559 KB

english, 1991

30

Secondary defect reduction by channeling implantation of B and P in 〈100〉 silicon

V. Raineri, R.J. Schreutelkamp, F.W. Saris, R.E. Kaim, K.T.F. Janssen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

31

Channeling implantation of B and P in silicon

R.J. Schreutelkamp, V. Raineri, F.W. Sans, R.E. Kaim, J.F.M. Westendorp, P.F.H.M. van der Meulen, K.T.F. Janssen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 440 KB

english, 1991

32

Pre-amorphization damage in Si(100) implanted with high mass MeV ions

R.J. Schreutelkamp, J.S. Custer, J.R. Liefting, F.W. Saris, W.X. Lu, B.X. Zhang, Z.L. Wang

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1992

Language:

english

File:

PDF, 702 KB

english, 1992

33

Analysis of microelectronic materials and devices: edited by M. Grasserbauer and H.W. Werner (Wiley, England, 1991) ISBN 0 471 91713 3, pp. xx + 934. Hardbound. £110.00

R.J. Schreutelkamp

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1992

Language:

english

File:

PDF, 76 KB

english, 1992

34

Determination of the density of states in amorphous silicon from thermostimulated conductivity measurements

G. Landweer, R. Schreutelkamp, H. Simons, J. Bezemer, W.F. van der Weg

Journal:

Journal of Non-Crystalline Solids

Year:

1987

Language:

english

File:

PDF, 177 KB

english, 1987

35

Prediction of pork quality attributes from near infrared reflectance spectra

G.H Geesink, F.H Schreutelkamp, R Frankhuizen, H.W Vedder, N.M Faber, R.W Kranen, M.A Gerritzen

Journal:

Year:

2003

Language:

english

File:

PDF, 234 KB

english, 2003

36

‘Blind’ review of interval breast cancers

J.M. de Rilke, L.J. Schouten, J.L. Schreutelkamp, I. Jochem, A.L.M. Verbeek

Journal:

European Journal of Cancer

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

37

Avoidable surgical consultations in women with a positive screening mammogram: Experience from a southern region of the Dutch breast screening programme

Schreutelkamp, J.L., Kwee, R.M., de Booij, M., Adriaensen, M.E.A.P.M.

Journal:

European Journal of Radiology

Year:

2014

Language:

english

File:

PDF, 607 KB

english, 2014

38

[IEEE The 17th Annual SEMI/IEEE ASMC 2006 Conference - Boston, MA (May 22-24, 2006)] The 17th Annual SEMI/IEEE ASMC 2006 Conference - High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM

van der Reijden, M.J., Op de Beeck, M., Sleeckx, E., Jaenen, P., Kunnen, E., Degroote, B., Wendy Yeh,, Schreutelkamp, R.

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

39

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Noda, T., Vandervorst, W., Felch, S., Parihar, V., Vrancken, C., Severi, S., Falepin, A., Janssens, T., Bender, H., Van Daele, B., Eyben, P., Niwa, M., Schreutelkamp, R., Nouri, F., Absil, P. P., Jurc

Year:

2006

Language:

english

File:

PDF, 1.60 MB

english, 2006

40

[IEEE 2007 International Workshop on Junction Technology - Kyoto, Japan (2007.06.8-2007.06.9)] 2007 International Workshop on Junction Technology - Laser Annealed Junctions: Process Integration Sequence Optimization for Advanced CMOS Technologies

Hoffmann, T., Noda, T., Felch, S., Severi, S., Parihar, V., Forstner, H., Vrancken, C., de Potter, M., van Daele, B., Bender, H., Niwa, M., Schreutelkamp, R., Vandervorst, W., Biesemans, S., Absil, P.

Year:

2007

Language:

english

File:

PDF, 3.82 MB

english, 2007

41

[IEEE 2006 International Symposium on VLSI Technology, Systems, and Applications - Hsinchu, Taiwan (2006.4.24-2006.4.24)] 2006 International Symposium on VLSI Technology, Systems, and Applications - NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing

Severi, S., Augendre, E., Falepin, A., Kerner, C., Ramos, J., Eyben, P., Vandervost, W., Curatola, C., Felch, S., Nouri, F., Kraus, P., Parihar, V., Noda, T., Schreutelkamp, R., Hoffmann, T., Absil, P

Year:

2006

Language:

english

File:

PDF, 2.31 MB

english, 2006

42

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM)

Noda, T., Eyben, P., Vandervorst, W., Vrancken, C., Rosseel, E., Ortolland, C., Clarysse, T., Goossens, J., De Keersgieter, A., Felch, S., Schreutelkamp, R., Absil, P. P., Jurczak, M., De Meyer, K., B

Year:

2008

Language:

english

File:

PDF, 2.12 MB

english, 2008

43

Radiological Abnormalities of the Manubriosternal Joint in Patients with Rheumatoid Arthritis and Osteoarthrosis

Verschuuren, J., Gobi The, H. S., Schreutelkamp, I., Houben, H. M., Burlage, F., Korte, Ph. De, Van Zanten, O. Veldhuyzen

Journal:

Scandinavian Journal of Rheumatology

Year:

1987

Language:

english

File:

PDF, 217 KB

english, 1987

44

Reduction of secondary defect formation in MeV B+ ion-implanted Si (100)

Lu, W. X., Qian, Y. H., Tian, R. H., Wang, Z. L., Schreutelkamp, R. J., Liefting, J. R., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 696 KB

english, 1989

45

Electrically active, ion implanted boron at the solubility limit in silicon

Liefting, J. R., Schreutelkamp, R. J., Vanhellemont, J., Vandervorst, W., Maex, K., Custer, J. S., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

46

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Wang, Zhong-lie, Zhang, Bo-xu, Zhao, Qing-tai, Li, Qi, Liefting, J. R., Schreutelkamp, R. J., Saris, F. W.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1015 KB

english, 1992

47

Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

Nyns, Laura, Shi, Xiaoping, Tielens, Hilde, Van Elshocht, Sven, Date, Lucien, Schreutelkamp, Robert

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2012

Language:

english

File:

PDF, 718 KB

english, 2012

48

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., Maex, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 610 KB

english, 1992

49

Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Schreutelkamp, R. J., Custer, J. S., Liefting, J. R., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

50

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Raineri, V., Schreutelkamp, R. J., Saris, F. W., Janssen, K. T. F., Kaim, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 608 KB

english, 1991

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